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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD531 DESCRIPTION With TO-220C package High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 100 90 8 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 5 43 150 -55~150 UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA; RBE= IC=5mA; IE=0 IE=5mA; IC=0 IC=4A;IB=0.4 A VCB=100V; IE=0 VEB=6V; IC=0 IC=0.1A ; VCE=2V 60 MIN 90 100 8 TYP. 2SD531 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE MAX UNIT V V V 2.0 0.1 0.1 V mA mA TOR NDU ICO E SEM ANG INCH 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD531 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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